1 2 10.2 0.2 2.8 0.1 19.0 0.5 pin 3.5 0.3 0.9 0.1 5.0 0.1 13.8 0.5 2.6 0.2 0.5 0.1 8.9 0.2 1.4 0.2 4.5 0.2 |? 3 . 8 0 . 1 5 features mechanical data p o s i t i on: a ny maximum ratings and electrical characteristics ratings at 25 a m b i ent t e m pe r a t u r e un l e s s o t h e r w i s e s pe c i f i ed. units maximum recurrent peak reverse voltage v rrm v max imum rms v oltage v r m s v m a x i m um d c b l o c k i ng v o l t a g e v dc v m a x i m um a v e r a g e f o r w a r d t o t a l de v i c e m rectif ied current @t c = 1 25 c i f (a v ) a peak forw ard surge current 8.3ms single half b s i ne - w a v e s u pe r i m p o s e d on r ated l o a d i f s m a m a x i m u m f o r w a r d ( i f = 1 6 a , t c = 2 5 ) v o l ta g e ( n ote 1 ) ( i f =16a,t c =125 ) maximum reverse current @t c = 2 5 at rated dc blocking voltage @t c = 1 2 5 m a x i m u m t h e r m a l r e s i s t a n c e (note2) r j c /w operating junction temperature range t j storage temperature range t stg 2. thermal resistance from junction to case. m a 30 35 40 45 50 60 90 100 1 6 150 21 2 5 28 32 35 42 63 70 3 0 35 40 4 5 50 60 90 100 v o l t a g e r a n g e: 3 0 - 10 0 v curr e n t : 1 6 a metal silicon junction, majority carrier conduction. ca s e : j e d e c t o - 2 2 0 a c , m o l ded p l a s t i c body schottky barrier rectifier h i gh c u r r ent c apa c i t y , l o w f o r w a r d v o l t age d r op. n o t e : 1 . p u l s e t e s t: 3 0 0 s pu l s e w i d t h , 1% d u t y c y c l e. - 5 5 - --- + 17 5 - 5 5 - --- + 15 0 t e r m i na l s : lead s , s o l de r a b l e per m i l - s t d - 750, 1 1 m e t hod 2026 i r v f 0 . 2 1.0 1.5 t o- 220 a c mbr1 6 3 0 - - - mbr1 6 100 mbr mbr mbr mbr mbr mbr mbr mbr 1 6 3 0 1 6 35 1 6 40 1 6 4 5 1 6 50 1 6 60 1 6 90 1 6 100 g ua r d r i ng f or o v er v o l t age p r o t e c t i on. high surge capacity. for use in low voltage, high frequency inverters, free 111 wheeling, and polarity protection applications. p o l a r i t y : a s m a r k e d w e i gh t : 0.069 ounces,1.96 gram 40 50 v 0.63 0.57 0.75 0.85 0.65 - single phase,half wave,60hz,resistive or inductive load.for capactive load,derate current by 20%. dimensions in millimeters diode semiconductor korea www.diode.kr
average forward rectified current,amperes peak forward surge current amperes amperes fi g. 4--typi cal reverse characteri sti cs number of cycles at 60hz f i g . 2 -- m a x i m um n o n - r e p e t i t i v e f i g . 3 -- t y p i cal i n s t a n t an e o u s instantaneous reverse leakage f o r w a r d char a c t e r i s t i cs instantaneous forward curren t instantaneous forward voltage,volts f o r w a rd s ur g e cur r e n t ambient temperature, ?? mbr1 63 0 - - - mbr16 10 0 fi g. 1 -- forward current derati ng curve reverse voltage,volts puls e duration, sec junction capacitance,pf percent of rated peak reverse voltage,% current, milliamperes fi g. 6--typi cal transi ent thermal i mpedance fi g. 5--typi cal juncti on capaci tance transient thermal impedance , ?? /w 0 1 25 50 100 75 125 150 10 100 tj=tj max. 8.3ms single half sine-wave 0.1 100 m b r 1650 - m b r 16 100 mbr1635-mbr1645 1100 10 4,000 1,000 tj=25 ?? f=1.0mhz vsig=50mvp-p tj=25 ?? m b r 1650 - m b r 16 10 0 m b r 163 0 - m b r 16 4 5 tj=125 ?? tj=75 ?? 02040 80 60 100 1 10 50 0.1 0.01 0.001 t j =125 ?? 0.01 50 0.1 1 10 0 0.1 0.2 0.3 0.6 0.7 pu l s e w i d t h = 30 0 | s 1 % d u ty cy c l e 0.4 0.5 0.8 t j =25 ?? m b r 165 0 - m b r 1 6 60 m b r 163 0 - m b r 1 6 45 0.9 1.0 1.1 1.2 resistive or inductive load 0 50 100 150 0 12 4 8 16 20 1 0.01 0.1 0.1 1 100 10 10 100 mbr1690-MBR16100 www.diode.kr diode semiconductor korea
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